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UV-LASE
1. SHORT PULSE WIDTH
2. HIGH PEAK POWER
3. EXCELLENT BEAM QUALITY
4. HEAT AFFECTED ZONE 감소
5. HIGH APPLICATION FOR GLASS, SILICON WAFER, SAPPHIRE ETS.
UV-LASE
Wavelength 355nm
Average Output Power * (typical) 3W ± 5%@30kHz
Repetition Rate Range 20 -80 kHz
Pulse Width 8ns @30kHz
Max Pulse Energy * (typical) 100uJ
Aiming Beam Class 2M Red Laser Diode; λ=635nm +/-5nm; 3mW
Temperature Range Operative 10°C to 35°C
Storing 0° to 50 °C
Cooling System Air cooled
Power Supply DC 24V:28V
Laser Power Consumption typical 450 W
maximum 600 W
Connectivity I/O signal; RS 232 & Ethernet for monitoring
Optical Fiber Length SI ST600F D80LKA, 3 m length, allowable bending radius 150 mm
Resonator Dimension & Weight SOURCE mm 130 x 165 x 557  8.5kg
MARKER mm 165 x 166 x 675 10.7kg (included scanning head)
Rack Dimension & Weight 499 x 437 x 87mm   12kg
EEC Rules compliance 2004/108/EEC: “Electromagnetic Compatibility”
2006/95/EEC: “Low Voltage”
EU Standard compliance EN 61000-6-4, EN 61000-6-2, EN60204-1, EN60825-1
Standard version supplied BEX 10X , MiniScan8_ 355nm with F-Theta 103L (telecentric)
working distance mm 139 - working area mm 50x50