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GREEN LASE
1. 짧은 펄스 위드
2. 높은 피크 파워
3. 빔 품질 우수
4. HEAT AFFECTED ZONE 감소
5. GLASS, SILICON WAFER, SAPPHIRE ETS.에 마킹 가능
-Overview-
·10W의 Green Laser(Secomd Harmonic Generation_532nm)입니다.
·그린레이저는 IR Laser에 반응하지 않는 플라스틱 물질군과 반도체 웨이퍼, 실리콘에 만족 할 만한 성과를 나타낼 수 있습니다.
·반사율이 높은 금, 은, 황동, 구리에 마킹이 가능합니다.
 
 
 
  GREEN-LASE 4W GREEN-LASE 10W
Wavelength 532nm 532nm
Average Output Power * (typical) 4W±5%@50kHz 10W±5%@50kHz
Repetition Rate Range 15 -200kHz 20-100kHz*
Pulse Width 20ns@50kHz@100% Current Level 18ns@50kHz@100% Current Level
Max Pulse Energy * (typical) 200uJ@20kHz 340uJ@20kHz
Aiming Beam Class 2M Red Laser Diode; λ=635nm+/-5nm; 3mW
Temperature Range Operative 10°C to 35°C
Storing 0 to 50 °C
Cooling System Air cooled
Power Supply DC 24V:28V+/- 5%
Laser Power Consumption typical 450 W
maximum 600 W
Connectivity I/O signal; RS 232 & Ethernet for monitoring
Optical Fiber Length SI ST600F D80LKA, 3 m length, allowable bending radius 150 mm
Resonator Dimension & Weight 114 x 119 x 526mm 7kg
Rack Dimension & Weight 499 x 437 x 87mm 12kg
EEC Rules compliance 2004/108/EEC: “Electromagnetic Compatibility”
2006/95/EEC: “Low Voltage”
EU Standard compliance EN 61000-6-4, EN 61000-6-2, EN60204-1, EN60825-1
Standard configuration Basic → BEX 4X , MiniScan8_ 532nm, f-theta 160S
Evo → BEX 4X , MiniScan8_ 532nm with f-theta 160S, with Mechanical Shutter & Power Meter
Options Beam Expander: 2X, 6X, 7.5X, 9X
Objective F-Theta mm 63S 100S 160S 254S
Working distance mm 71 115 181 290
Working area (mm x mm) 35x35 50x50 100x100 140x140
S (small) > Ø = 47mm