Home > 제품소개 > Laser Marking
GREEN LASE
1. SHORT PULSE WIDTH
2. HIGH PEAK POWER
3. EXCELLENT BEAM QUALITY
4. HEAT AFFECTED ZONE 감소
5. HIGH APPLICATION FOR GLASS, SILICON WAFER, SAPPHIRE ETS.
  GREEN-LASE 4W GREEN-LASE 10W
Wavelength 532nm 532nm
Average Output Power * (typical) 4W±5%@50kHz 10W±5%@50kHz
Repetition Rate Range 15 -200kHz 20-100kHz*
Pulse Width 20ns@50kHz@100% Current Level 18ns@50kHz@100% Current Level
Max Pulse Energy * (typical) 200uJ@20kHz 340uJ@20kHz
Aiming Beam Class 2M Red Laser Diode; λ=635nm+/-5nm; 3mW
Temperature Range Operative 10°C to 35°C
Storing 0 to 50 °C
Cooling System Air cooled
Power Supply DC 24V:28V+/- 5%
Laser Power Consumption typical 450 W
maximum 600 W
Connectivity I/O signal; RS 232 & Ethernet for monitoring
Optical Fiber Length SI ST600F D80LKA, 3 m length, allowable bending radius 150 mm
Resonator Dimension & Weight 114 x 119 x 526mm 7kg
Rack Dimension & Weight 499 x 437 x 87mm 12kg
EEC Rules compliance 2004/108/EEC: “Electromagnetic Compatibility”
2006/95/EEC: “Low Voltage”
EU Standard compliance EN 61000-6-4, EN 61000-6-2, EN60204-1, EN60825-1
Standard configuration Basic → BEX 4X , MiniScan8_ 532nm, f-theta 160S
Evo → BEX 4X , MiniScan8_ 532nm with f-theta 160S, with Mechanical Shutter & Power Meter
Options Beam Expander: 2X, 6X, 7.5X, 9X
Objective F-Theta mm 63S 100S 160S 254S
Working distance mm 71 115 181 290
Working area (mm x mm) 35x35 50x50 100x100 140x140
S (small) > Ø = 47mm